| PART |
Description |
Maker |
| KMM53616000CK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EM411M1612VTA EM404M1614VTA EM404M1612VTA EM402M16 |
16Mb ( 2Banks ) Synchronous DRAM 16兆（2Banks）同步DRAM
|
Electronic Theatre Controls, Inc.
|
| MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| BC369-10 |
16Mb EDO/FPM - OBSOLETE 晶体
|
SIEMENS AG
|
| R1LV1616R0709 R1LV1616RBG-7S R1LV1616RBG-8S R1LV16 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
Renesas Electronics Corporation
|
| DS3070W-100 DS3070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock
|
MAXIM[Maxim Integrated Products]
|
| WED2DG472512V5D2 WED2DG472512V7D2 WED2DG472512V65D |
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| N16L163WC2CZ1-55IL N16L163WC2C N16L163WC2CT1 N16L1 |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 16 bit
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| AS8SLC512K32PEC-15_ET AS8SLC512K32PEC-15_IT AS8SLC |
16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| HFDOM44S3R HFDOM44S3RXXX DOM44S3R016 DOM44S3R032 D |
44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
